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FCB199N65S3
onsemi
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1 | 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 30 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF); Optimized Capacitance; Internal Gate resistance: 7.0 ohm; Typ. RDS(on) = 170 mΩ; 100% Avalanche Tested; RoHS Compliant; Wave soldering guarantee | Other | FCB199N65S3 |
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