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FCB20N60FTM
onsemi
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1 | Ultra low gate charge ( Typ. Qg = 75nC ); 650V @TJ = 150°C; Low effective output capacitance ( Typ. Coss.eff = 165pF ); Typ. RDS(on) = 150mΩ; RoHS compliant; 100% avalanche tested | Other | FCB20N60FTM |
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FCB20N60FTM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FCB20N60FTM |
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