FCD4N60TM Model Download Search Results
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FCD4N60TM
onsemi
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1 | RoHS compliant; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 12.8nC ); 650V @TJ = 150°C; Low effective output capacitance ( Typ. Coss.eff = 32pF ); Typ. RDS(on) = 1.0Ω | Other | FCD4N60TM |
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FCD4N60TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3.9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FCD4N60TM |
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