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FCD9N60NTM
onsemi
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1 | Low effective output capacitance ( Typ. Coss.eff = 122pF ); Ultra low gate charge ( Typ. Qg = 17.8nC ); RoHS compliant; RDS(on) = 330mΩ ( Typ.) @ VGS = 10V, ID = 4.5A; 100% avalanche tested | Other | FCD9N60NTM |
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FCD9N60NTM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FCD9N60NTM |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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