FDB33N25TM Model Download Search Results
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FDB33N25TM
onsemi
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1 | RDS(on) = 94mΩ ( Max.)@ VGS = 10V, ID = 16.5A; Low Crss ( Typ. 39pF); 100% avalanche tested; Low gate charge ( Typ. 36.8nC) | Other | FDB33N25TM |
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FDB33N25TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FDB33N25TM |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_3.jpg"])
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