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FDB390N15A
onsemi
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1 | High Power and Current Handling Capability; RoHS Compliant; Fast Switching Speed; High Performance Trench Technology for Extremely Low RDS(on); RDS(on) = 33.5mΩ ( Typ.)@ VGS = 10V, ID= 27A; Low Gate Charge, QG = 14.3nC ( Typ.) | Other | FDB390N15A |
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FDB390N15A
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 27A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FDB390N15A |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_3.jpg"])
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