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FDC608PZ
onsemi
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1 | High performance trench technology for extremely low RDS(on); -5.8A, -20V, RDS(on) = 30mΩ @ VGS = -4.5V RDS(on) = 43mΩ @ VGS = -2.5V ; SuperSOT™ ¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick); Low gate charge | SOT23 (6-Pin) | FDC608PZ |
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FDC608PZ
Rochester Electronics LLC
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1 | 5.8A, 20V, 0.043ohm, P-CHANNEL, Si, POWER, MOSFET, SUPERSOT-6 | FDC608PZ |
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FDC608PZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 5.8A I(D), 20V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC608PZ |
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FDC608PZ-F171
onsemi
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1 | Power Field-Effect Transistor, 5.8A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC608PZ-F171 |
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