FDC608PZ Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
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FDC608PZ onsemi
1 High performance trench technology for extremely low RDS(on); -5.8A, -20V, RDS(on) = 30mΩ @ VGS = -4.5V RDS(on) = 43mΩ @ VGS = -2.5V ; SuperSOT™ ¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick); Low gate charge SOT23 (6-Pin) FDC608PZ 1 Download Model
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FDC608PZ Rochester Electronics LLC
1 5.8A, 20V, 0.043ohm, P-CHANNEL, Si, POWER, MOSFET, SUPERSOT-6 FDC608PZ 0 Build or Request
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FDC608PZ Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 5.8A I(D), 20V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FDC608PZ 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 5.8A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FDC608PZ-F171 0 Build or Request
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