FDC610PZ Model Download Search Results
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FDC610PZ
onsemi
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1 | Max rDS(on) = 75mΩ at VGS = -4.5V, ID = -3.7A; Low gate charge (17nC typical).; High performance trench technology for extremely low rDS(on). ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8) low profile (1mm thick).; Max rDS(on) = 42mΩ at VGS = -10V, ID = -4.9A; RoHS compliant | SOT23 (6-Pin) | FDC610PZ |
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FDC610PZ
Rochester Electronics LLC
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1 | 4.9mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SUPERSOT-6 | FDC610PZ |
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FDC610PZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 0.0049A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC610PZ |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_6.jpg"])
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