FDC655BN Model Download Search Results
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FDC655BN
onsemi
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1 | Max rDS(ON) = 25 mΩ VGS = 10V, ID = 6.3A ; Max rDS(ON) = 33 mΩ VGS = 4.5V, ID = 5.5A ; Termination is Lead-free and RoHS Compliant ; Fast switching ; High performance trench technology for extremely low rDS(ON) ; Low gate charge | SOT23 (6-Pin) | FDC655BN |
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FDC655BN
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDC655BN |
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FDC655BN_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | FDC655BN_NL |
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FDC655BN_F073
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | FDC655BN_F073 |
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FDC655BN-NBNN007
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | FDC655BN-NBNN007 |
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FDC655BN-F40
onsemi
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1 | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDC655BN-F40 |
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FDC655BN-F123
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | FDC655BN-F123 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_6.jpg"])
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