FDD6N25TM Model Download Search Results
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FDD6N25TM
onsemi
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1 | Low Crss ( Typ. 5pF); Low gate charge ( Typ. 4.5nC); RDS(on) = 1.1Ω ( Max.)@ VGS = 10V, ID = 2.2A; 100% avalanche tested | Other | FDD6N25TM |
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FDD6N25TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | FDD6N25TM |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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