FDG6303N Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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FDG6303N VBsemi Electronics Co Ltd
1 Dual N-Channel 20 V MOSFET in SOT-363 package with RDS(on) of 86 mOhm at VGS = 4.5 V, 110 mOhm at 2.5 V, and 180 mOhm at 1.8 V, suitable for load switch applications. FDG6303N 0 Build or Request
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FDG6303N onsemi
1 25 V, 0.50 A continuous, 1.5 A Peak. ; Compact industry standard SC70-6 surface mount package. ; RDS(ON) = 0.45 Ω @ VGS= 4.5 V, ; Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). ; RDS(ON) = 0.60 Ω @ VGS= 2.7 V. ; Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V). SOT23 (6-Pin) FDG6303N 1 Download Model
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FDG6303N Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDG6303N 0 Build or Request
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FDG6303N Rochester Electronics LLC
1 500mA, 25V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN FDG6303N 0 Build or Request
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FDG6303N_NL Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDG6303N_NL 0 Build or Request
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FDG6303NL99Z Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDG6303NL99Z 0 Build or Request
Part Image Part Image 1 Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDG6303N-F169 0 Build or Request
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FDG6303ND87Z Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDG6303ND87Z 0 Build or Request
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