FDG6321C Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDG6321C onsemi	1	Very small package outline SC70-6. ; Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). ; P-Ch -0.41 A, -25 V RDS(ON) = 1.1 Ω @ VGS= -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V; Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). ; N-Ch 0.50 A, 25 V RDS(ON) = 0.45 Ω @ VGS= 4.5 V RDS(ON) = 0.60 Ω @ VGS= 2.7 V	SOT23 (6-Pin)	FDG6321C	3D model available Symbol and footprint available 3	1 Download Model
	FDG6321C Rochester Electronics LLC	1	Small Signal Field-Effect Transistor		FDG6321C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDG6321C Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET		FDG6321C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDG6321CD87Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET		FDG6321CD87Z	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDG6321C_NL Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET		FDG6321C_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDG6321C-F169 onsemi	1	Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET		FDG6321C-F169	3D model not available Symbol and footprint not available 0	0 Build or Request

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