FDG88 Model Download Search Results
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FDG8842CZ
onsemi
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1 | RoHS Compliant; Very small package outline SC70-6; Q1: N-Channel Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A; Very low level gate drive requirements allowing directoperation in 3V circuits(VGS(th) <1.5V); Q2: P-Channel Max rDS(on) = 1.1Ω at VGS = -4.5V, ID = -0.41A Max rDS(on) = 1.5Ω at VGS = -2.7V, ID = -0.25A | SOT23 (6-Pin) | FDG8842CZ |
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FDG8850NZ
onsemi
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1 | RoHS Compliant; Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A; Very small package outline SC70-6; Very low level gate drive requirements allowing operationin 3V circuits(VGS(th) <1.5V); Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A | SOT23 (6-Pin) | FDG8850NZ |
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FDG8842CZ
Rochester Electronics LLC
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1 | 750mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6 PIN | FDG8842CZ |
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FDG8842CZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 0.75A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDG8842CZ |
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FDG8850NZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 0.75A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDG8850NZ |
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FDG8850NZ-G
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 0.75A I(D), N-Channel, Metal-oxide Semiconductor FET | FDG8850NZ-G |
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FDG8850NZ
Rochester Electronics LLC
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1 | 750mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6 PIN | FDG8850NZ |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sc70_6.jpg"])
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