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FDG8842CZ - onsemi

Description: RoHS Compliant; Very small package outline SC70-6; Q1: N-Channel Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A; Very low level gate drive requirements allowing directoperation in 3V circuits(VGS(th) <1.5V); Q2: P-Channel Max rDS(on) = 1.1Ω at VGS = -4.5V, ID = -0.41A Max rDS(on) = 1.5Ω at VGS = -2.7V, ID = -0.25A

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FDG8842CZ - onsemi - PCB symbol
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PCB Footprints
FDG8842CZ - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88 (SC−70 6 Lead), 1.25x2 CASE 419AD−01 ISSUE A
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3D Models
FDG8842CZ - onsemi - 3D model - SOT23 (6-Pin) - SC−88 (SC−70 6 Lead), 1.25x2 CASE 419AD−01 ISSUE A
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FDG8842CZ Details

  • Manufacturer Part Number:

    FDG8842CZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Package Description:

    SC-70, 6 PIN

  • Manufacturer Package Code:

    419AD

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    0.75 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDG8842CZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature (TJ) and ensure it stays within the recommended operating range.
  • Focus on the input filter design, ensuring a common-mode choke with a high impedance at the switching frequency, and a differential-mode filter with a low impedance at the switching frequency. Also, consider the PCB layout and component placement to minimize EMI radiation.
  • Use a gate drive circuit with a low output impedance and a high current capability. Ensure the gate drive voltage is within the recommended range (typically 10-15 V) and the gate resistance is minimized to reduce switching losses.
  • Ensure identical devices, identical PCB layouts, and identical thermal management systems. Implement a master-slave configuration with a single gate drive signal and a common source connection. Monitor and balance the current sharing between devices.

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FDG8842CZ Overview

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FDG8842CZ Alternates

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Part Image FDG8842CZ Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.75A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET