FDH3632 Model Download Search Results
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FDH3632
onsemi
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1 | RDS(on) = 7.5mΩ (Typ.) @ VGS = 10V, ID = 80A; UIS Capability (Single Pulse and Repetitive Pulse) ; Low Qrr Body Diode; Low Miller Charge; RoHS Compliant; QG(tot) = 84nC (Typ.) @ VGS = 10V | Transistor Outline, Vertical | FDH3632 |
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FDH3632
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | FDH3632 |
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FDH3632_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | FDH3632_NL |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to247_3.jpg"])
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