FDI04 Model Download Search Results
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FDI045N10A-F102
onsemi
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1 | RoHS Compliant; RDS(on) = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A ; Low Gate Charge, QG = 54nC ( Typ.); High Performance Trench Technology for Extremely Low RDS(on) ; High Power and Current Handling Capability ; Fast Switching Speed | Transistor Outline, Vertical | FDI045N10A-F102 |
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FDI045N10A_F102
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | FDI045N10A_F102 |
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FDI040N06
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | FDI040N06 |
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FDI040N06
onsemi
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1 | Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | FDI040N06 |
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FDI047AN08A0
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 80A I(D), 75V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB | FDI047AN08A0 |
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FDI045N10A_F102
onsemi
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1 | N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ, TO-262 3L (I2PAK), 8000-RAIL | FDI045N10A_F102 |
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![Part Image](["https://componentsearchengine.com/Images/1/FDI045N10A-F102.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to262aa_3.jpg"])
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