FDMA8051L Model Download Search Results
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FDMA8051L
onsemi
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1 | Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 8.5 A ; Free from halogenated compounds and antimony oxides ; Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 10 A ; RoHS Compliant ; Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm | Other | FDMA8051L |
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FDMA8051L
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 10A I(D), 40V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDMA8051L |
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