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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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FDMC3612
onsemi
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1 | RoHS Compliant ; Low Profile - 1 mm max in Power 33 ; Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A ; 100% UIL Tested ; Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A | Other | FDMC3612 |
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FDMC3612
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3.3A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | FDMC3612 |
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FDMC3612-L701
onsemi
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1 | Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A ; Low Profile - 1 mm max in Power 33 ; Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A ; 100% UIL Tested ; RoHS Compliant | Other | FDMC3612-L701 |
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