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FDMC86139P
onsemi
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1 | This product is optimised for fast switching applications as well as load switch applications; Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A; Very low RDS-on mid voltage P channel silicon technology optimised for low Qg; Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A; 100% UIL Tested; RoHS Compliant | Other | FDMC86139P |
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FDMC86139P
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 4.4A I(D), 100V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDMC86139P |
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