FDMS6681Z Model Download Search Results
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FDMS6681Z
onsemi
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1 | Max rDS(on) = 5.0 mΩ at VGS = -4.5 V, ID = -15.7 A ; HBM ESD protection level of 8kV typical (Note 3); RoHS Compliant ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 3.2 mΩ at VGS = -10 V, ID = -21.1 A ; MSL1 robust package design | Other | FDMS6681Z |
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FDMS6681Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 21.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDMS6681Z |
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FDMS6681Z
Rochester Electronics LLC
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1 | 21100mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, POWER 56, MO-240AA, 8 PIN | FDMS6681Z |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/son_8.jpg"])
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