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FDMS6681Z - onsemi

Description: Max rDS(on) = 5.0 mΩ at VGS = -4.5 V, ID = -15.7 A ; HBM ESD protection level of 8kV typical (Note 3); RoHS Compliant ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 3.2 mΩ at VGS = -10 V, ID = -21.1 A ; MSL1 robust package design

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PCB Footprints
FDMS6681Z - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_1
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3D Models
FDMS6681Z - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_1
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FDMS6681Z Details

  • Manufacturer Part Number:

    FDMS6681Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AE

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    122 A

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2020 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    73 W

  • Pulsed Drain Current-Max (IDM):

    600 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    732 ns

  • Turn-on Time-Max (ton):

    85 ns

FDMS6681Z Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's current handling capability at high temperatures.
  • The maximum allowed voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.
  • Yes, but ensure the device is properly bypassed and decoupled. Also, consider the device's switching losses and thermal performance at high frequencies.
  • Use a TVS diode or a zener diode to clamp the voltage and protect the device from EOS. Also, ensure proper PCB layout and routing to minimize electromagnetic interference (EMI).

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FDMS6681Z Overview

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