FDMS8025S Model Download Search Results
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FDMS8025S
onsemi
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1 | Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A ; RoHS Compliant ; SyncFET Schottky Body Diode ; Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A ; 100% UIL tested ; MSL1 robust package design ; Advanced package and silicon combination for low rDS(on) and high efficiency | Other | FDMS8025S |
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FDMS8025S
Rochester Electronics LLC
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1 | 24A, 30V, 0.0028ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | FDMS8025S |
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FDMS8025S
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS8025S |
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