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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Advanced Package and Silicon combination for low rDS(on) and high efficiency ; MSL1 robust package design ; Max rDS(on) = 5.0 mO at VGS = 10 V, ID = 18 A ; 100% UIL tested ; SyncFET Schottky Body Diode ; Max rDS(on) = 6.2 mO at VGS = 4.5 V, ID = 16 A ; RoHS Compliant Other FDMS8027S 1 Download Model
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FDMS8027S Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 18A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS8027S 0 Build or Request
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FDMS8027S Rochester Electronics LLC
1 18A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN FDMS8027S 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor FDMS8027S-NC 0 Build or Request
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