FDMS86101A Model Download Search Results
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FDMS86101A
onsemi
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1 | MSL1 robust package design ; 100% Rg tested; Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A ; Shielded Gate MOSFET Technology | Other | FDMS86101A |
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FDMS86101A
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 13A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS86101A |
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