FDMS86101DC Model Download Search Results
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FDMS86101DC
onsemi
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1 | Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A ; Dual Cool™ Top Side Cooling PQFN package ; 100% UIL Tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A ; RoHS Compliant ; High performance technology for extremely low rDS(on) | Other | FDMS86101DC |
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FDMS86101DC
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS86101DC |
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