FDMS86163P Model Download Search Results
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FDMS86163P
onsemi
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1 | Very low RDS(on) mid voltage P-channel silicon technology optimised for low Qg; Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A ; This product is optimised for fast switching applications as well as load switch applications ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A | Other | FDMS86163P |
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FDMS86163P
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7.9A I(D), 100V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS86163P |
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