FDMS86181 Model Download Search Results
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FDMS86181
onsemi
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1 | Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A ; RoHS Compliant ; Lowers switching noise/EMI ; 50% lower Qrr than other MOSFET suppliers ; ADD ; 100% UIL tested ; MSL1 robust package design ; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ; Shielded Gate MOSFET Technology | Other | FDMS86181 |
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FDMS86181
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor | FDMS86181 |
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FDMS86181E
onsemi
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1 | Power Field-Effect Transistor, 124A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS86181E |
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