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FDMS86181 - onsemi

Description: Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A ; RoHS Compliant ; Lowers switching noise/EMI ; 50% lower Qrr than other MOSFET suppliers ; ADD ; 100% UIL tested ; MSL1 robust package design ; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ; Shielded Gate MOSFET Technology

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PCB Footprints
FDMS86181 - onsemi PCB footprint - Other - Other - FDMS86181-3
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3D Models
FDMS86181 - onsemi  - 3D model - Other - FDMS86181-3
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FDMS86181 Details

  • Manufacturer Part Number:

    FDMS86181

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    337 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    124 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    510 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    52 ns

  • Turn-on Time-Max (ton):

    49 ns

FDMS86181 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Use a heat sink with a thermal interface material, ensure good airflow, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage on the VIN pin is 36V, but it's recommended to keep it below 30V for reliable operation and to prevent damage from voltage spikes.
  • Use a diode or a reverse polarity protection circuit to prevent damage from accidental reverse voltage connections.
  • A 10uF to 22uF X5R or X7R ceramic capacitor is recommended for input decoupling. The capacitor should be placed close to the VIN pin and have a low ESR.

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FDMS86181 Overview

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