FDMS86200 Model Download Search Results
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FDMS86200
onsemi
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1 | 100% UIL tested ; RoHS Compliant ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A ; Shielded Gate MOSFET Technology ; Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A | Other | FDMS86200 |
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FDMS86200
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 9.6A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS86200 |
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FDMS86200DC
onsemi
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1 | RoHS Compliant ; Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A ; High performance technology for extremely low rDS(on) ; 100% UIL tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A ; Dual Cool™ Top Side Cooling PQFN package | Other | FDMS86200DC |
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FDMS86200E
onsemi
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0 | FET 150V 18.0 MOHM PQFN56 | Other | FDMS86200E |
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FDMS86200DC
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 9.3A I(D), 150V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS86200DC |
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![Part Image](["https://componentsearchengine.com/Images/1/FDMS86200E.jpg",null,null])
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