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FDMS86200 - onsemi

Description: 100% UIL tested ; RoHS Compliant ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A ; Shielded Gate MOSFET Technology ; Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A

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PCB Footprints
FDMS86200 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCT
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3D Models
FDMS86200 - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCT
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FDMS86200 Details

  • Manufacturer Part Number:

    FDMS86200

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    9.6 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS86200 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDMS86200 is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and ensure the device is operated within the specified voltage and current ranges.
  • A good PCB layout should prioritize thermal management, with a solid ground plane, minimal thermal resistance, and adequate heat sinking. Follow onsemi's recommended PCB layout guidelines and thermal management strategies for optimal performance.
  • To troubleshoot issues, start by verifying proper biasing, checking for thermal issues, and ensuring the device is operated within specified voltage and current ranges. Consult the datasheet and onsemi's application notes for guidance on troubleshooting common issues.
  • Follow standard ESD protection procedures, such as using anti-static wrist straps, mats, and bags, and handling the device by the body rather than the leads. Consult onsemi's ESD handling guidelines for more information.

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FDMS86200 Overview

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