FDN306P Model Download Search Results
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FDN306P
onsemi
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1 | Fast switching speed; RDS(ON) = 50 mΩ @ VGS = -2.5 V; SuperSOT™-3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint; High performance trench technology for extremelylow RDS(ON); RDS(ON) = 40 mΩ @ VGS = -4.5 V; RDS(ON) = 80 mΩ @ VGS = -1.8 V; -2.6 A, -12 V | SOT23 (3-Pin) | FDN306P |
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FDN306P
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDN306P |
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FDN306P
Rochester Electronics LLC
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1 | 2600mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 | FDN306P |
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FDN306PD87Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDN306PD87Z |
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FDN306P_NL
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDN306P_NL |
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FDN306P-G
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | FDN306P-G |
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FDN306P-F095
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | FDN306P-F095 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_3.jpg"])
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