Part Image

FDN306P - onsemi

Description: Fast switching speed; RDS(ON) = 50 mΩ @ VGS = -2.5 V; SuperSOT™-3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint; High performance trench technology for extremelylow RDS(ON); RDS(ON) = 40 mΩ @ VGS = -4.5 V; RDS(ON) = 80 mΩ @ VGS = -1.8 V; -2.6 A, -12 V

Download FDN306P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDN306P - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SSOT-3
click to zoom
3D Models
FDN306P - onsemi  - 3D model - SOT23 (3-Pin) - SSOT-3
click to zoom

FDN306P Details

  • Manufacturer Part Number:

    FDN306P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    0.5 W

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN306P Frequently Asked Questions (FAQs)

  • The FDN306P can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDN306P requires a bias voltage of 12V to 15V on the gate pin, and a current limit resistor is recommended to prevent overcurrent conditions.
  • The FDN306P has a maximum continuous drain current rating of 30A, and a peak current rating of 60A for 10ms pulses.
  • Use a TVS diode or a zener diode to clamp overvoltage transients, and consider adding ESD protection devices such as a transient voltage suppressor (TVS) or a diode array.
  • Use a 2-layer or 4-layer PCB with a solid ground plane, and keep the drain and source pins as close as possible to minimize inductance and improve thermal performance.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDN306P Overview

Use the download button to access the FDN306P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDN30, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDN306P

Showing 0 results

FDN306P Alternates

Showing results

Image Part Number Model
Part Image FDN306P Rochester Electronics LLC

2600mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3

Part Image FDN306P_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET