FDN338P Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDN338P Shenzhen Heketai Electronics Co Ltd	1	P-channel MOSFET with -20V drain-source voltage, -1.6A continuous drain current, 115mΩ on-resistance at -4.5V gate-source voltage, and SOT-23 surface-mount package.		FDN338P	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN338P onsemi	1	Fast switching speed; RDS(ON) = 155 mΩ @ VGS = –2.5 V; RDS(ON)= 115 mΩ @ VGS = –4.5 V ; SuperSOT™ -3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint; High performance trench technology for extremely low RDS(ON); –1.6 A, –20 V	SOT23 (3-Pin)	FDN338P	3D model available Symbol and footprint available 3	1 Download Model
	FDN338P Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FDN338P	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN338P Rochester Electronics LLC	1	1600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3		FDN338P	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDN338PX onsemi	0	P-Channel 2.5V Specified PowerTrench MOSFET	SOT23 (3-Pin)	FDN338PX	3D model available Symbol and footprint available 3	1 Download Model
	FDN338P-NL VBsemi Electronics Co Ltd	1	P-Channel 20-V, 5-A MOSFET in SOT-23 package with 0.035 ohm typical RDS(on) at VGS = -10 V, suitable for load switch, PA switch, and DC/DC converter applications.		FDN338P-NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN338P-T/R onsemi	1	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FDN338P-T/R	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN338P-T/R Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FDN338P-T/R	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN338P_NL Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FDN338P_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN338PD87Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FDN338PD87Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN338PL99Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FDN338PL99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN338PS62Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FDN338PS62Z	3D model not available Symbol and footprint not available 0	0 Build or Request

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