FDN339AN Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDN339AN onsemi	1	High power and current handling capability.; High performance trench technology for extremely low RDS(ON) .; 3 A, 20 V; Low gate charge (7nC typical).; RDS(ON) = 0.035 Ω @ VGS = 4.5 V; RDS(ON) = 0.050 Ω @ VGS = 2.5 V.	SOT23 (3-Pin)	FDN339AN	3D model available Symbol and footprint available 3	1 Download Model
	FDN339AN Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDN339AN	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN339AN Rochester Electronics LLC	1	3000mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3		FDN339AN	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN339AN_NL Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDN339AN_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDN339AND87Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDN339AND87Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN339AN-F095 Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor		FDN339AN-F095	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN339AND87Z onsemi	1	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDN339AND87Z	3D model not available Symbol and footprint not available 0	0 Build or Request

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