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FDN339AN - onsemi

Description: High power and current handling capability.; High performance trench technology for extremely low RDS(ON) .; 3 A, 20 V; Low gate charge (7nC typical).; RDS(ON) = 0.035 Ω @ VGS = 4.5 V; RDS(ON) = 0.050 Ω @ VGS = 2.5 V.

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PCB Footprints
FDN339AN - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
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3D Models
FDN339AN - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
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FDN339AN Details

  • Manufacturer Part Number:

    FDN339AN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN339AN Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDN339AN is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is 12V.
  • The maximum current rating for the FDN339AN is 3.5A.
  • To protect the FDN339AN from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or tube.
  • Yes, the FDN339AN is suitable for high-frequency applications up to 1 GHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit.

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FDN339AN Overview

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Part Image FDN339AN Rochester Electronics LLC

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Part Image FDN339AN Fairchild Semiconductor Corporation

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Part Image FDN339AN_NL Fairchild Semiconductor Corporation

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