FDN360P Model Download Search Results
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FDN360P
onsemi
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1 | RDS(on) = 125 mΩ @ VGS = -4.5 V ; High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability; High Performance Trench Technology for Extremely Low rDS(on); -2 A, -30 V; Low Gate Charge (6.2nC typical); RDS(on) = 80 mΩ @ VGS = -10 V | SOT23 (3-Pin) | FDN360P |
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FDN360P
Rochester Electronics LLC
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1 | 2000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 | FDN360P |
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FDN360P
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDN360P |
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FDN360P-NBGT003B
onsemi
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1 | Power Bipolar Transistor | FDN360P-NBGT003B |
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FDN360PD87Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDN360PD87Z |
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FDN360P_NL
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDN360P_NL |
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FDN360P-F095
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | FDN360P-F095 |
0
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FDN360P-NBGT003B
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | FDN360P-NBGT003B |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_3.jpg"])
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