FDN537N Model Download Search Results
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FDN537N
VBsemi Electronics Co Ltd
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1 | N-Channel 30-V MOSFET with 0.030 ohm RDS(on) at VGS = 10 V, 6.5 A continuous drain current, 4.5 nC gate charge, and SOT-23 package, suitable for DC/DC converters, halogen-free and RoHS compliant. | FDN537N |
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FDN537N
onsemi
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1 | Fast Switching Speed; 100% UIL Tested ; Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A ; Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A ; High Performance Trench Technology for Extremely Low rDS(on); RoHS Compliant ; High Power and Current Handling Capability in a Widely Used Surface Mount Package | SOT23 (3-Pin) | FDN537N |
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FDN537N
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDN537N |
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