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FDN537N - onsemi

Description: Fast Switching Speed; 100% UIL Tested ; Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A ; Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A ; High Performance Trench Technology for Extremely Low rDS(on); RoHS Compliant ; High Power and Current Handling Capability in a Widely Used Surface Mount Package

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PCB Footprints
FDN537N - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23_1
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3D Models
FDN537N - onsemi  - 3D model - SOT23 (3-Pin) - SOT23_1
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FDN537N Details

  • Manufacturer Part Number:

    FDN537N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    ROHS COMPLIANT, SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN537N Frequently Asked Questions (FAQs)

  • The FDN537N can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Consult the datasheet for specific biasing recommendations.
  • The FDN537N has a maximum continuous drain current rating of 2.5A, and a maximum pulsed drain current rating of 5A.
  • Handle the FDN537N with ESD-protective equipment, such as wrist straps and mats, and ensure that the device is stored in an ESD-protective package.
  • Yes, the FDN537N is suitable for high-frequency switching applications up to 1 MHz, but be aware of the device's switching losses and thermal considerations.

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FDN537N Overview

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