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Image Part Number D.S Description Package Category Prices / Stock Model Action
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FDP070AN06A0 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB FDP070AN06A0 0 Build or Request
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FDP070AN06A0 Rochester Electronics LLC
1 15A, 60V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN FDP070AN06A0 0 Build or Request
Part Image Part Image 1 RDS(on) = 6.1 mΩ (Typ.) @ VGS = 10 V, ID = 80 A; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge; Low Qrr Body Diode; Qg(tot) = 51 nC (Typ.) @ VGS = 10 V FDP070AN06A0 1 Download Model
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