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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 High Power and Current Handling Capability; Fast Switching; High Performance Trench Technology for Extremely Low RDS(on) ; RDS(on) = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A; RoHS Compliant; Low Gate Charge, QG = 77nC ( Typ.) Transistor Outline, Vertical FDP075N15A-F102 1 Download Model
Part Image Part Image 1 MOSFET PowerTrench N-Ch 150V 130A TO220 Transistor Outline, Vertical FDP075N15A_F102 1 Download Model
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FDP075N15A_F102 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB FDP075N15A_F102 0 Build or Request
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