FDP26 Model Download Search Results
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FDP26N40
onsemi
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1 | Last Shipments - N-Channel PowerTrench MOSFET 250V, 50A, 47mΩ | Transistor Outline, Vertical | FDP26N40 |
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FDP2614
onsemi
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1 | RDS(on) = 22.9mΩ ( Typ.) @ VGS = 10V, ID = 31A; High power and current handling capability ; RoHS compliant; Low Gate Charge; High performance trench technology for extremely low RDS(on) ; Fast switching speed | Transistor Outline, Vertical | FDP2614 |
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FDP26N40
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDP26N40 |
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FDP2670
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDP2670 |
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FDP2670J69Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDP2670J69Z |
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FDP2670S62Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDP2670S62Z |
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FDP2614
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 62A I(D), 200V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDP2614 |
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FDP2670
Rochester Electronics LLC
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1 | 19A, 200V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FDP2670 |
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![Part Image](["https://componentsearchengine.com/Images/3/FDP26N40.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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