FDP65 Model Download Search Results
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FDP65N06
onsemi
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1 | Fast Switching Speed; RDS(on) = 13mΩ (Max.)@ VGS = 10V, ID = 32.5A; Low gate charge (Typ. 33nC); Low Crss (Typ. 35pF); Improved dv/dt Capability | Transistor Outline, Vertical | FDP65N06 |
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FDP65N06
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDP65N06 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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