FDPF33N25T Model Download Search Results
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FDPF33N25T
onsemi
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1 | RDS(on) = 94mΩ ( Max.)@ VGS = 10V, ID = 16.5A; Low gate charge ( Typ. 36.8nC); 100% avalanche tested; Low Crss ( Typ. 39pF) | Transistor Outline, Vertical | FDPF33N25T |
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FDPF33N25T
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDPF33N25T |
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FDPF33N25TRDTU
onsemi
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1 | Power Field-Effect Transistor, 33A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | FDPF33N25TRDTU |
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FDPF33N25TRDTU
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 33A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | FDPF33N25TRDTU |
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FDPF33N25TRSTU
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor | FDPF33N25TRSTU |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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