FDS4435BZ Model Download Search Results
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FDS4435BZ
onsemi
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1 | High performance trench technology for extremely low rDS(on); Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –6.7A; High power and current handling capability ; Termination is Lead–free and RoHS compliant; Max rDS(on) = 20mΩ at VGS = –10V, ID = –8.8A; HBM ESD protection level of ±3.8KV typical (note 3) ; Extended VGSS range (–25V) for battery applications | Small Outline Packages | FDS4435BZ |
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FDS4435BZ
Rochester Electronics LLC
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1 | 8800mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8 | FDS4435BZ |
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FDS4435BZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 8.8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS4435BZ |
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FDS4435BZ_F085
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | FDS4435BZ_F085 |
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FDS4435BZ-F085
onsemi
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1 | P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ, SO 8L NB, 2500-REEL, Automotive Qualified | FDS4435BZ-F085 |
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FDS4435BZ_F085
onsemi
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1 | -30V, -8.8A, 20mΩ, SO-8 P-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL | FDS4435BZ_F085 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
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