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FDS4685
onsemi
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1 | Fast switching speed; RDS(ON) = 0.027 mΩ @ VGS = -10V; -8.2A, -40V; High performance trench technology for extremely low RDS(ON); High power and current handling capability; RDS(ON) = 0.035 mΩ @ VGS = -4.5V | Small Outline Packages | FDS4685 |
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FDS4685
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 8.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS4685 |
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FDS4685
Rochester Electronics LLC
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1 | 8200mA, 40V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | FDS4685 |
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FDS4685-NF074
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 8.2A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | FDS4685-NF074 |
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