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FDS4685 - onsemi

Description: Fast switching speed; RDS(ON) = 0.027 mΩ @ VGS = -10V; -8.2A, -40V; High performance trench technology for extremely low RDS(ON); High power and current handling capability; RDS(ON) = 0.035 mΩ @ VGS = -4.5V

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FDS4685 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS4685 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS4685 Details

  • Manufacturer Part Number:

    FDS4685

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    8.2 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS4685 Frequently Asked Questions (FAQs)

  • The FDS4685 can operate from -40°C to 150°C, making it suitable for automotive and industrial applications.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the EN pin to a logic high (VCC) to enable the device. Also, ensure the input voltage (VIN) is within the recommended range of 4.5V to 5.5V.
  • To minimize EMI and noise, use a multi-layer PCB with a solid ground plane, keep the input and output traces short and separate, and use a common-mode choke or ferrite bead on the input lines. Also, place the device close to the power source and use a decoupling capacitor (e.g., 10uF) between VCC and GND.
  • Yes, the FDS4685 is qualified to the AEC-Q100 standard, which ensures it meets the stringent requirements for automotive and high-reliability applications, including aerospace.
  • To troubleshoot issues, check the input voltage and current, ensure proper biasing, and verify the enable pin (EN) is properly driven. Also, check for overheating, and verify the device is not exposed to excessive voltage or current. If issues persist, consult the onsemi support resources or contact their technical support team.

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Part Image FDS4685 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 8.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET