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FDS4935A
onsemi
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1 | RDS(ON) = 35 mΩ @ VGS = -4.5V ; -7A, -30V ; High performance trench technology for extremely low RDS(ON) ; Low gate charge (15nC typical) ; High power and current handling capability ; RDS(ON) = 23 mΩ @ VGS = -10V ; Fast switching speed | Small Outline Packages | FDS4935A |
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FDS4935A
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS4935A |
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FDS4935A
Rochester Electronics LLC
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1 | 7A, 30V, 0.023ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 | FDS4935A |
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FDS4935A_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS4935A_NL |
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