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FDS6930B
onsemi
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1 | 5.5A, 30V; Fast switching speed; High performance trench technology for extremely low RDS(ON); High power and current handling capability; RDS(ON) = 50 mΩ @ VGS = 4.5V; RDS(ON) = 38 mΩ @ VGS = 10V; Low gate charge | Small Outline Packages | FDS6930B |
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FDS6930B
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6930B |
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FDS6930B_NL
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6930B_NL |
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FDS6930B-SBNT001
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6930B-SBNT001 |
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