FDS8858CZ Model Download Search Results
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FDS8858CZ
onsemi
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1 | Q2 P-Channel Max. RDS(on) = 20.5 mΩ at VGS = -10 V, ID = -7.3 A Max. RDS(on) = 34.5 mΩ at VGS = -4.5 V, ID = -5.6 A; High Power and Current Handling Capability in a Widely Used Surface Mount Package; Q1 N-Channel Max. RDS(on) = 17 mΩ at VGS = 10 V, ID = 8.6 A Max. RDS(on) = 20 mΩ at VGS = 4.5 V, ID = 7.3 A; Fast Switching Speed | Small Outline Packages | FDS8858CZ |
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FDS8858CZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 8.6A I(D), 30V, 0.017ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS8858CZ |
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