FDS8949 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDS8949 onsemi	1	Max rDS(on) = 29mΩ at VGS = 10V; High performance trench technology for extremely low rDS(on); RoHS compliant; High power and current handling capability; Max rDS(on) = 36mΩ at VGS = 4.5V; Low gate charge	Small Outline Packages	FDS8949	3D model available Symbol and footprint available 3	1 Download Model
	FDS8949 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6A I(D), 40V, 0.043ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS8949	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS8949 Rochester Electronics LLC	1	6A, 40V, 0.043ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8		FDS8949	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS8949_F085 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6A I(D), 40V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS8949_F085	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDS8949_F085 onsemi	1	40V, 6.0A, 21mΩ, SO-8, Logic Level Dual N-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL		FDS8949_F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS8949-F085 onsemi	1	Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29mΩ, SO 8L NB, 2500-REEL, Automotive Qualified		FDS8949-F085	3D model not available Symbol and footprint not available 0	0 Build or Request

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